Abstract
FeCoB layer prepared on Ru underlayer exhibited a high magnetic anisotropy field H k around 500 Oe. Sputtering conditions to fabricate Ru/FeCoB bilayered film with high H k were examined. Low Ar gas pressure condition around 1 mTorr for the deposition of FeCoB layer was required to induce compressive stress in the film which may cause an expansion of the lattice. The sputtering gas of Ar was preferable than Kr to cause the lattice expansion which resulted in higher H k. Thinner Ru underlayer caused high H k of the Ru/FeCoB bilayered film. The sputtering gas pressure for Ru underlayer of 6 mTorr was better than that of 16 mTorr to attain high H k of FeCoB upperlayer.
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