Abstract
Ru/CoPtCr-SiO 2 bilayer prepared at 4 and 26 mTorr of Ar gas pressure for the deposition of Ru and CoPtCr-SiO 2 layers, respectively, exhibits better magnetic properties suitable for perpendicular magnetic recording media when they are deposited at room temperature on a Pt seed layer prepared at 450 °C. The Ru-O seed layer fabricated by a reactive sputtering method improves the Ru (0 0 1) texture deposited on a Ru-O layer. The Ru-O/Ru hybrid type of underlayer causes the improvement of the c-axis orientation of CoPtCr crystallites in the CoPtCr-SiO 2 layer deposited on it. Fine granulation of magnetic grains in the CoPtCr-SiO 2 layer is also attained when they are deposited on the Aramid type of flexible tape substrates.
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