Abstract
The continuous-wave operation of InGaN multi-quantum-well (MQW) structure laser diodes (LDs) was demonstrated at room temperature with a threshold current of 25 mA, a threshold voltage of 5.8 V, an output power of 30 mW and a high operating temperature of 100°C. The energy differences between the absorption and the emission energy of the InGaN MQW structure LDs were as large as 220 meV at RT. A deep localized state (the localization energy is >100 meV) was formed in the InGaN well layer due to the InGaN phase separation during the growth. Both the spontaneous emission and the stimulated emission of the LDs originated from these deep localized energy states. The far field pattern showed a higher order transverse mode of the entire 5-μm-thick epitaxial layer stack, with air and sapphire as the upper and lower cladding layers, respectively.
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