Abstract
The formation of ultra-shallow n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> layers by P or As implantation and subsequent rapid thermal annealing (RTA) or flash-lamp annealing (FLA) is investigated. The focus is on diffusion and activation of dopants. RTA leads to considerable broadening of the shallow as-implanted profiles by concentration-dependent diffusion. In contrast, FLA does not cause any diffusion and is therefore a promising method for producing ultra-shallow n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> p junctions in Ge. Under present annealing conditions RTA yields maximum activation levels of about 1.1E19 and 6.5E18 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−3</sup> for P and As, respectively. The maximum activation achieved by FLA is about 4.0E19 and 2.1E19 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−3</sup> for P and As, respectively. Possible mechanisms for diffusion and deactivation of dopants are discussed.
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