Abstract
A 200 mm amorphised Si wafer was implanted with 6-keV H + ions at a nominal fluence of 5 × 10 16 atoms/cm 2. The uniformity of the implant was better than 2% over the wafer. Samples of the wafer were analysed for absolute H fluence by nuclear reaction analysis and elastic recoil detection (ERD) analysis, including both helium and heavy ion beams, using various types of detector (Si with range foil, time of flight ERD, and a position-sensitive gas ionisation Δ E– E detector), various ion beams (He, Cl, Cu, I, Au) and independent analytical procedures. The results are compared and the inter-lab reproducibility is evaluated. The surface H, unstable under heavy ion beams, was resolved and accounted for throughout the analysis. Estimates of total combined uncertainties are about 6% for all participants, but the inter-lab reproducibility of the measurements was found to be 2.2%. Correct quantification of the H data from the gas ionisation detector is demonstrated. The uncertainty budget is discussed in detail.
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