Abstract
In secondary ion mass spectrometry, high depth resolution for the characterization of ultra‐shallow junctions can only be obtained when making use of low‐energy primary ion bombardment. However, such analysis conditions often lead to roughness formation at the crater bottoms.In this paper, roughness formation has been studied on silicon for Cs+ bombardment on the Cameca (Gennevilliers, France)SC‐Ultra instrument. Impact energies have been changed from 250 eV up to 5 keV working in positive secondary ion polarity.The surface morphology has been characterized by atomic force microscopy. Surface roughening appeared at low primary ion fluence and continued growing at higher fluences. Ripples formed perpendicular to the plane containing the beam and the normal to the surface. Their wavelength and correlation length have been studied as a function of the experimental conditions. Both parameters increase with increasing ion fluence, and higher values of ion energy promoted more ordered rippled structures and lower values of roughness. Copyright © 2012 John Wiley & Sons, Ltd.
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