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Abstract
We have examined the roughness evolution of the Si(111) surface at T=610 K by 500 eV Ar ion bombardment near normal incidence using scanning tunneling microscopy from submonolayer to multilayer etching of up to 120 bilayers. The observed roughening was inconsistent with diffusion bias roughening, which is the mechanism thought to be dominant in roughening of crystalline surfaces by deposition and etching. The roughness evolution was interpreted in the framework of dynamic scaling, applicable when the step-edge barrier for surface diffusion is low. The roughness and growth exponents measured were in agreement with the numerical simulation of the Kuramoto–Sivashinsky equation with noise in the early time for 2+1 dimensions, which corresponds to the initial stage of dynamic scaling of ion bombardment.
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