Abstract
The roughening kinetics of copper films synthesized by low pressure chemical vapor deposition (LPCVD) on Si(100) substrates was investigated by scanning tunneling microscopy (STM). By applying the dynamic scaling theory to the STM images, a steady growth roughness exponent α=0.81±0.05 and a dynamic growth roughness exponent β=0.62±0.09 were determined. The value of α is consistent with growth model predictions incorporating surface diffusion. The value of β, while higher than expected from these models, can be related to LPCVD processing conditions favoring growth instabilities.
Highlights
Aluminum films have commonly been used in the metallization of integrated circuit devices
Copper is a suitable alternative choice because of its low bulk electrical resistivity ~1.67 versus 2.65 mV cm for Al! and its superior electromigration resistance which would allow higher current densities to be sustained on smaller linewidths as well as minimize the RC delay time of the circuit
Recent studies have focused on the use of ~trimethylvinylsilyl! hexafluoroacetylacetonato copper I @~hfac! Cu~I! TMSV# as a precursor for the deposition of LPCVD Cu films at relatively low temperatures and high growth rates
Summary
Aluminum films have commonly been used in the metallization of integrated circuit devices. TMSV# as a precursor for the deposition of LPCVD Cu films at relatively low temperatures and high growth rates. Imaging of Cu films grown by LPCVD from ~hfac!
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