Abstract
A new rotating boat system for liquid phase epitaxial growth has been developed. This system can produce GaP green light-emitting diodes on a large scale. It's features are that large quantities of substrates can be treated for one batch processing, that the consumption of the Ga melt is small, that the growing surface is flat and mirror-like and that the quality of growth layers in each run is uniform. A single growth run by the overcompensation method, was used to prepare the green light-emitting junctions. An electroluminescence efficiency of 0.1% was routinely obtained and the maximum efficiency was 0.2% for an unencapsulated diode at a current density of 12.5 A/cm2.
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