Abstract
This manuscript reports room-temperature one-step synthesis of earth-abundant semiconductor ZnSiN2 on amorphous carbon substrates using radio frequency reactive magnetron co-sputtering. Transmission Electron Microscopy and Rutherford Backscattering Spectrometry analysis demonstrated that the synthesis has occurred as ZnSiN2 nanocrystals in the orthorhombic phase, uniformly distributed on amorphous carbon. The technique of large-area deposition on an amorphous substrate can be interesting for flexible electronics technologies. Our results open possibilities for environmentally friendly semiconductor devices, leading to the development of greener technologies.
Highlights
Semiconductor materials can be considered one of the technology pillars of contemporaneous life
We report room-temperature one-step synthesis of earth-abundant and non-toxic semiconductor ZnSiN2 on amorphous carbon by using radio frequency (RF) reactive magnetron co-sputtering
We would like to emphasize that annular dark-field (ADF)-STEM mode was intentionally applied to maximize contrast-diffraction effects, which is possible because those nanostructures have a clear crystalline character
Summary
Semiconductor materials can be considered one of the technology pillars of contemporaneous life. Studies on green technologies are quite recent[17] and take into consideration the long-term demand of elements[18] and its environmental impacts in the near future[19,20] Exploring these aspects, scientists have paid attention to abundance[21] and toxicity of elements for materials synthesis, aiming various a pplications[10,22,23,24,25]. Our synthesis brings new perspectives to synthesize Z nSiN2 without the need for expensive or complex substrate preparation or thermal treatment process This process has the advantage to allow large-scale/large-area synthesis, even on an amorphous substrate, a strong point to applications in macro e lectronics[40,41] taking into account environmentally friendly c oncepts[42]
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