Room-temperature operation of highly functional single-electron transistor logic based on quantum mechanical effect in ultra-small silicon dot

M Saitoh,T Hiramoto

doi:10.1109/iedm.2003.1269390

Room-temperature operation of highly functional single-electron transistor logic based on quantum mechanical effect in ultra-small silicon dot

M Saitoh, T Hiramoto

https://doi.org/10.1109/iedm.2003.1269390

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Publication Date: Dec 8, 2003

Citations: 7

Affiliation: The University of Tokyo, Tokyo University of Science

#Ultra-small Dot #Single-hole Transistors + Show 8 more

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Abstract

This paper describes the room-temperature (RT) demonstration of a newly proposed highly-functional single-electron transistor (SET) logic based on the quantum mechanical effect. We fabricate single-hole transistors (SHTs) in the form of extremely constricted channel MOSFETs and obtain large Coulomb blockade (CB) oscillations with a peak-to-valley current ratio (PVCR) of 10/sup 2/ at RT. In the fabricated single-dot SHTs, clear negative differential conductance (NDC) with a PVCR of 11.8 (highest ever reported) is also observed at RT because of the large quantum level spacing (/spl Delta/E) in the ultrasmall dot. By combining CB and NDC, XOR operation is successfully demonstrated as a current output in just one SHT.

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