Room-Temperature Nanoimprint using Sol-Gel ITO Film

Abstract

We report room-temperature nanoimprint (RT-NIL) process using sol-gel indium tin oxide (ITO) as a replicated material. The spin-coated ITO film has to be annealed at over 600 °C to obtain a low resistivity. The spin-coated ITO film can be delineated by RT-NIL, but the patterns disappeared after 200 °C annealing process. To overcome the above problem, we examined the O2 plasma irradiation effect onto a spin-coated ITO film. As a result, we found that the ITO patterns imprinted by RT-NIL were kept at annealing of 600 °C for 1 hour by O2 plasma irradiation before annealing.