Room-temperature local magnetoresistance effect in n-Ge devices with low-resistive Schottky-tunnel contacts

Makoto Tsukahara,Kentarou Sawano,Kohei Hamaya,Shinya Yamada,Vlado K Lazarov,Michihiro Yamada,Takahiro Naito

doi:10.7567/1882-0786/ab0252

Abstract

Two-terminal local magnetoresistance (MR) effect in n-type germanium (Ge) based lateral spin-valve (LSV) devices can be observed at room temperature. By using phosphorus δ-doped Heusler-alloy/Ge Schottky-tunnel contacts, the resistance-area product of the contacts is able to be less than 0.20 kΩ μm2, which is the lowest value in semiconductor based LSV devices. From the one-dimensional spin drift-diffusion model, the interface spin polarization of the Heusler-alloy/Ge contacts in the present LSV devices can be estimated to be ∼0.018 at room temperature. We experimentally propose that it is important for enhancing the local MR ratio in n-Ge based LSV devices to improve the interface spin polarization of the Heusler-alloy/Ge contacts.

Highlights

To cite this article: Makoto Tsukahara et al 2019 Appl
For developing semiconductor-based spintronic applications,1–7) electrical spin injection and detection techniques have been explored in III–V8) and group-IV9–11) semiconductors
It has been recognized that the four-terminal nonlocal Hanleeffect curves in both parallel and anti-parallel magnetization states are the most reliable evidence for the spin transport in semiconductors

Summary

Introduction

To cite this article: Makoto Tsukahara et al 2019 Appl. Phys. Room-temperature local magnetoresistance effect in n-Ge devices with low-resistive Schottky-tunnel contacts

Results

Conclusion