Room-temperature in situ fabrication of Bi2O3/g-C3N4 direct Z-scheme photocatalyst with enhanced photocatalytic activity

Abstract

Constructing direct Z-scheme heterojunction is an effective approach to separating photogenerated charge carriers and improving the activity of semiconductor photocatalysts. Herein, a composite of bismuth(III) oxide (Bi2O3) and graphitic carbon nitride (g-C3N4) was in situ fabricated at room temperature by photoreductive deposition of Bi3+ and subsequent air-oxidation of the resultant metallic Bi. Quantum-sized ω-Bi2O3 nanoparticles approximately 6nm in diameter were uniformly distributed on the surface of mesoporous g-C3N4. The as-prepared Bi2O3/g-C3N4 composite exhibited higher photocatalytic activity than pure Bi2O3 and g-C3N4 for photocatalytic degradation of phenol under visible light. Reactive species trapping experiments revealed that superoxide radicals and photogenerated holes played important roles in the photocatalytic degradation of phenol. The enhanced photocatalytic activity, identification of reactive species and higher rate of charge carrier recombination (as indicated by stronger photoluminescence intensity) collectively suggest that the charge migration within the Bi2O3/g-C3N4 composite followed a Z-scheme mechanism. Photogenerated electrons on the conduction band of Bi2O3 migrate to the valence band of g-C3N4 and combine with photogenerated holes therein. At the cost of these less reactive charge carriers, the Z-scheme heterojunction enables efficient charge separation, while preserving the photogenerated electrons and holes with stronger redox abilities, which is beneficial for enhanced photocatalytic activity.