Abstract

Magnesium which is thermally diffused into silicon is well-known to behave like an interstitial donor. Recent study indicates that magnesium in silicon containing proper amount of oxygen can pair with oxygen to form magnesium–oxygen complex impurity, which is also an interstitial donor in silicon. Our study on this subject further shows that such magnesium–oxygen complex impurities can even be formed by interstitial magnesium and dispersed oxygen in silicon at quite low temperatures such as room-temperature. Experimentally observed results clearly demonstrating this newly found phenomenon are given.

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