Abstract
We discuss that the effects of Ga flux and growth temperature on ferromagnetic properties of (Ga,Mn)N films grown on sapphire substrate by plasma-enhanced molecular beam epitaxy. The (Ga,Mn)N thin films exhibited ferromagnetic ordering at room temperature without any secondary phases verified by X-ray diffraction. It is found that the magnetic properties of the films are improved with decreasing Ga flux. It is also observed that saturation magnetization increases with decreasing the (Ga,Mn)N film growth temperature.
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