Abstract

Since the discovery of single-layer graphene in 2004, two-dimensional (2D) van der Waals (vdW) materials represented by it have demonstrated excellent electrical, magnetic, mechanical and optical physical properties under the structure of one or several layers of atomic thickness1. Based on these superior properties, 2D-layered vdW ferromagnetic materials have become the basis for constructing low-dimensional spintronics devices2, in which Fe3GeTe2 (FGT)3, Cr2Ge2Te64 and CrI35 as the main representative materials exhibit strong perpendicular magnetic anisotropy and other important characteristics in single layer. However, the Curie temperature (Tc) of above materials has not reached room temperature yet, which has greatly hinderer the subsequent development for device application. Therefore, recently researchers have been committed to explore 2D vdW ferromagnetic materials for room-temperature Tc in both theory and experiment. Here, we report that the interfacial engineering effect could effectively increase the Tc of the 2D vdW ferromagnetic material FGT from 230 K to 400 K, through heteroepitaxy with topological insulator of Bi2Te3. A theoretical calculation was further carried out to describe the magnetic properties by using first-principles calculations and the self-consistent Hubbard U approach (DFT+Uscf) together with the Monte Carlo (MC) simulations. After combination with Bi2Te3, the intralayer interactions in FGT was calculated to dramatically increase compared to that in pure FGT, well explaining the Tc enhancement. Our results may open up a new door to benefit the magnetic order in the 2D limit and realize spintronic devices based on 2D-layered vdW ferromagnetic materials with room temperature performances towards industrialization. **

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