Abstract
Vertically aligned single-crystal InSb nanowires were synthesized via the electrochemical method at room temperature. The characteristics of Fourier transform infrared spectrum revealed that in the syntheses of InSb nanowires, energy bandgap shifts towards the short wavelength with the occurrence of an electron accumulation layer. The current–voltage curve, based on the metal–semiconductor–metal model, showed a high electron carrier concentration of 2.0 × 1017 cm−3 and a high electron mobility of 446.42 cm2 V−1 s−1. Additionally, the high carrier concentration of the InSb semiconductor with the surface accumulation layer induced a downward band bending effect that reduces the electron tunneling barrier. Consequently, the InSb nanowires exhibit significant field emission properties with an extremely low turn-on field of 1.84 V μm−1 and an estimative threshold field of 3.36 V μm−1.
Highlights
Group III-V semiconductor nanowires, i.e., InAs, InP, GaAs, GaP, and InSb, have attracted substantial scientific and technological interests in nanoelectronic devices due to their high electronic transfer characteristic with low leakage currents
Both the fast Fourier transform (FFT) pattern and the high-resolution transmission electron microscope (HRTEM) image verify that the synthesized InSb nanowires have an excellent crystal quality with a preferred growth direction of [200]
Single-crystalline InSb nanowires can be successfully synthesized via the electrochemical method at room temperature
Summary
Group III-V semiconductor nanowires, i.e., InAs, InP, GaAs, GaP, and InSb, have attracted substantial scientific and technological interests in nanoelectronic devices due to their high electronic transfer characteristic with low leakage currents. Among the III-V group, indium antimony (InSb) bulk (Eg = 0.17 eV, at 300 K) is a promising III-V direct-bandgap semiconductor material with zincblende (FCC) structure. Due to its narrow bandgap, InSb is extensively used in the fabrication of infrared optical detectors, infrared homing missile guidance systems, and infrared astronomy [2,3,4]. There is significant interest in InSb for the fundamental investigation of its nanostructure for potential application as nanoelectronic devices
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