Abstract
The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore's law, spintronics, and quantum detection and imaging for sensing applications. These technologies require a shift from traditional semiconducting and magnetic nanostructured materials. Here, a new material system is reported, which comprises the InSe semiconductor van der Waals crystal that embeds ferromagnetic Fe‐islands. In contrast to many traditional semiconductors, the electronic properties of InSe are largely preserved after the incorporation of Fe. Also, this system exhibits ferromagnetic resonances and a large uniaxial magnetic anisotropy at room temperature, offering opportunities for the development of functional devices that integrate magnetic and semiconducting properties within the same material system.
Highlights
The controlled manipulation of the spin and charge of electrons in a semiand single-molecule magnets[3] to single atoms.[4]
The realization of magnetic semiconductors has proven to be challenging and it has led to material systems with interesting magnetic and electronic properties.[8,9,10]
We demonstrate magnetic and semiconducting properties in the van Magnetic anisotropy is at the heart of spintronics: it gives rise der Waals-layered crystal InSe, a material system that has to an energy barrier between two opposite spin directions emerged as a promising candidate for electronics[11] and photoand to the possibility to store and process informa- nics[12] due to its high electron mobility, chemical stability, and tion.[1]
Summary
The controlled manipulation of the spin and charge of electrons in a semiand single-molecule magnets[3] to single atoms.[4]. Incorporation of Fe. this system exhibits ferromagnetic resonances and a large uniaxial magnetic anisotropy at room temperature, offering opportunities for the development of functional devices that integrate magnetic and semiconducting properties within the same material system.
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