Abstract
In recent years, graphene oxide has been considered as a soluble precursor of graphene for electronic applications. However, the performance lags behind that of graphene due to lattice defects. Here, the relation between the density of defects in the range of 0.2 % and 1.5 % and the transport properties is quantitatively studied. Therefore, the related flakes of monolayers of graphene were prepared from oxo‐functionalized graphene (oxo‐G). The morphologic structure of oxo‐G was imaged by atomic force microscopy (AFM) and scanning tunneling microscopy (STM). Field‐effect mobility values were determined to range between 0.3 cm2 V−1 s−1 and 33.2 cm2 V−1 s−1, which were inversely proportional to the density of defects. These results provide the first quantitative description of the density of defects and transport properties, which plays an important role for potential applications.
Highlights
In recent years, graphene oxide has been considered as a soluble precursor of graphene for electronic applications
In contrast to pristine graphene with carbon atoms arranged into a twodimensional hexagonal lattice, oxo-functionalized graphene (oxo-G) consists of abundant sp3hybridized carbon atoms, which are covalently bound to oxogroups, mainly hydroxyl and epoxy groups.[9]
During the oxidative synthesis of graphene oxide (GO) and oxo-G, defects are introduced into the carbon framework.[10a]. They cannot be healed out by simple chemical reduction oxo-addends are reductively defunctionalized from the carbon lattice by a chemical reductant.[18]
Summary
AFM characterization was performed by using a JPK NanoWizard 4 Atomic Force Microscope in tapping mode at room temperature. Raman characterization was carried out with a Horiba Explorer spectrometer with a 532 nm laser for excitation under air conditions. The defect-free monolayer G0% flakes were prepared by micromechanical exfoliation and transferred on Si/SiO2 substrates as reported methods.[21]. The defective GD flakes were prepared by low-temperature oxidation of graphite based by the before reported method of our group.[20a] the oxo-G was dissolved in methanol/water 1:1 mixtures. The monolayer flakes of GD were deposited onto the Si/ SiO2 substrate by using the Langmuir–Blodgett technique (LB, Kibron MicroTrough, 3 mN mÀ1 with the surface tension of water as reference value of 72.8 mN mÀ1). The density of defects of individual flakes was determined by Raman spectroscopy (Horiba Explorer spectrometer with a 532 nm laser for excitation under air conditions). Flakes with defined density of defects were selected for FET device fabrication
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