Abstract

In some medical laboratory tests, a sampling method via intravenous injection is required. Previous research pointed out using near-infrared (NIR) light vein detectors to reduce erroneous injections. Therefore, low-cost, high-efficiency and stability NIR phosphors are highly essential. Herein, high-stability, ultrathin SiO2 wrapped NIR-CH(NH2)2PbI3 (FAPbI3) perovskite nanocrystals (NCs) are successfully manufactured via one-step method at room temperature atmospheric synthesis. By optimizing the hydrolytic condensation conditions of tetraethoxysilane (TEOS), the resulting FAPbI3@SiO2 perovskite NCs phosphors exhibits a high photoluminescence quantum yields (PLQYs) of 57.2% and improves water resistance and thermostability. The low-cost NIR light-emitting diodes (NIR-LEDs) fabricated by coating NIR-FAPbI3@SiO2 perovskite NCs phosphors on commercial blue InGaN LEDs chip demonstrated a ∼787 nm EL spectra of NIR-LEDs under the startup voltage of 2.6 V. Even after 12 h of continuous working, no significant changes were observed in the EL spectra of the NIR-LEDs, which indicates that NIR-FAPbI3@SiO2 perovskite NCs phosphor has high capacity in biological applications.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.