Room temperature sputtering of inclined c-axis ZnO for shear mode solidly mounted resonators

Abstract

ZnO films with a c-axis significantly inclined away from the surface normal were grown by a remote plasma sputtering technique at room temperature. The films were used to make solidly mounted resonators (SMRs) operating in shear mode at a resonant frequency of 1.35 GHz. Control of the ZnO microstructure was achieved using a polycrystalline AlN seed layer which can be added on top of a sputtered acoustic mirror to give a complete SMR device. The ZnO was reactively sputtered in an atmosphere of argon and oxygen from a zinc target. The c-axis of the ZnO was estimated to be at an angle of ∼45° to the surface normal. SMRs were measured to have quality factors (Q) of up to 140 and effective electromechanical coupling coefficients of up to 2.2% in air. Although an inclined c-axis can be achieved with direct growth onto the acoustic mirror, it is shown that the AlN seed layer provides higher coupling coefficients and narrower inclination angular distribution. The responses of the devices in liquids of different viscosities (acetone, water, and AZ5214E photoresist) were measured. The shear mode Q decreased by 45% in acetone, 72% in water, and 92% in AZ5214E.