Abstract
Gate SiO2 films in poly-Si TFTs were fabricated by sputtering at substrate temperature from 300°C down to room-temperature. It was found that poly-Si TFT characteristics of mobility, threshold voltage and subthreshold slope were greatly improved by decreasing substrate temperature. Mobility of the poly-Si TFT for room-temperature was 90 cm2/V.s, much higher than 50 cm2/V.s for 300°C. Moreover, sputtered gate SiO2 poly-Si TFTs showed high reliability against hot carrier effect even for room-temperature-deposition.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
