Abstract
The demand for high mobility TFTs realised on temperature unstable substrates is increasing. These devices require thin, low-temperature, high-quality gate dielectrics. It is known however, that a low deposition temperature degrades the films properties. In this work, we report that films comparable to thermally grown oxide can be deposited at room temperature, with a modified electron cyclotron resonance (ECR) plasma source, called multipolar ECR. SiO 2 films with interface charge in the order of 10 11 ions/cm 2 , critical field of 6 MV/cm and refractive index of 1.46 were obtained for optimal deposition conditions. The effects of total pressure and microwave power on material properties were studied. The electrical behaviour of the SiO 2 layers was explained in terms of film structure and deposition parameters.
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