Abstract
The authors report on the fabrication and characterization of single-electron memories based on site-controlled InAs quantum dots (QDs) embedded in a GaAs/AlGaAs quantum-wire transistor. By using a hole structure template on a modulation-doped GaAs/AlGaAs heterostructure in combination with etching techniques, two single InAs QDs were centrally positioned in a quantum-wire transistor so that pronounced shifts of the transistor threshold occur by charging of the QDs with single electrons. Single-electron read and write functionalities up to room temperature were observed. The memory function can be also controlled by light with a wavelength in the telecommunication range.
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