Room temperature single electron effects in a Si nano-crystal memory

Ilgweon Kim Ilgweon Kim,Sangyeon Han Sangyeon Han,Hyungcheol Shin Hyungcheol Shin,Jongho Lee Jongho Lee,Kwangseok Han Kwangseok Han

doi:10.1109/55.806109

Room temperature single electron effects in a Si nano-crystal memory

Ilgweon Kim Ilgweon Kim, Sangyeon Han Sangyeon Han + Show 3 more

https://doi.org/10.1109/55.806109

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Journal: IEEE Electron Device Letters	Publication Date: Dec 1, 1999
Citations: 65

Affiliation: Korea Advanced Institute of Science and Technology, LG Corporation (South Korea), Wonkwang University

#Si Nano-crystal #Si Nano-crystal Memory + Show 8 more

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Abstract

An MOS memory based on Si nano-crystals has been fabricated. We have developed a repeatable process of forming uniform, small-size and high-density Si nano-crystals and spherical nano-crystals of about 4.5 nm in diameter with density of 5/spl times/10/sup 11//cm/sup 2/ were obtained. Threshold voltage shift of 0.48 V corresponding to single electron storage in individual nano-crystals is obtained. For the first time, room temperature single electron effects are observed. These prove the feasibility of practical Si nano-crystal memory.

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