Room temperature simulation of a novel quantum wire transistor

Abstract

Results of room temperature simulation of a novel quantum wire transistor are presented. The transistor action in this device is obtained by modulating the carrier density instead of the channel width. This structure has recently been realized experimentally. Our analysis is based on the nonequilibrium Green's function formalism that takes into account the quantum mechanical interference effects as well as the effects of inelastic electron–phonon scattering. The formalism guarantees current conservation within the active device in the presence of inelastic scattering. Results show good transistor characteristics. Strong suppression of electron–phonon scattering is found to be responsible for improved device performance. The gate is effective in controlling the device current. Maximum transconductance at saturation is high and occurs at relatively large gate voltage. This device is found to be suitable for many room temperature applications.