Abstract
Current–voltage (I–V) characteristics of Ag∕Pr0.7Ca0.3MnO3(PCMO)∕YBa2Cu3O7−δ(YBCO) junctions fabricated on LaAlO3 (001) substrates were measured. Nonlinear, asymmetric, and hysteretic I–V curves, that are considered to be the nature of the resistance memory effect previously reported, were observed. In some junctions the I–V characteristics were switched between linear and nonlinear by its thermal hysteresis. Room-temperature I–V characteristics, originally being linear, turned to be nonlinear after cooling to 100K, and returned to be linear after heating to 400K.
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