Abstract
Current–voltage (I–V) characteristics of Ag∕Pr0.7Ca0.3MnO3(PCMO)∕YBa2Cu3O7−δ(YBCO) junctions fabricated on LaAlO3 (001) substrates were measured. Nonlinear, asymmetric, and hysteretic I–V curves, that are considered to be the nature of the resistance memory effect previously reported, were observed. In some junctions the I–V characteristics were switched between linear and nonlinear by its thermal hysteresis. Room-temperature I–V characteristics, originally being linear, turned to be nonlinear after cooling to 100K, and returned to be linear after heating to 400K.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
