Abstract
Quantum spin Hall (QSH) insulators carry spin current at the edge of the sample even without charge current, indicating that they have great potential applications in spintronics and spin memory. In this work, we investigate the electronic and topological properties of functionalized stanene growing on layered PbI2. It is found that a large energy gap (0.3 eV) is opened at the Γ point with consideration of spin-orbital coupling. The band evolution mechanism shows that the band inversions occur between px,y and s of Sn atoms. The existence of gapless helical edge states together with Z2 = 1 consistently demonstrates that the room temperature QSH effect is achieved on the SnI/PbI2 heterostructure system. Our findings point out a way for searching high temperature QSH insulators.
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