Abstract
In this study, the room-temperature pulsed operation of a nitride nanowire-based multi-quantum shell laser diode with a thick p-type GaN cap layer grown on a conventional c-face GaN substrate was demonstrated using the metalorganic chemical vapor phase epitaxy method. The threshold current density of the laser was approximately 62 kA cm−2, and the voltage at the threshold current was 14 V. Optical spectral characteristics with two peak wavelengths, 403 and 417 nm, were observed.
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