Abstract

Zinc Oxide (ZnO) has been regarded as a promising electron transport layer (ETL) in perovskite solar cells (PSCs) owing to its high electron mobility. However, the acid-nonresistance of ZnO could destroy organic-inorganic hybrid halide perovskite such as methylammonium lead triiodide (MAPbI3) in PSCs, resulting in poor power conversion efficiency (PCE). It is demonstrated in this work that Nb2O5/ZnO films were deposited at room temperature with RF magnetron sputtering and were successfully used as double electron transport layers (DETL) in PSCs due to the energy band matching between Nb2O5 and MAPbI3 as well as ZnO. In addition, the insertion of Nb2O5 between ZnO and MAPbI3 facilitated the stability of the perovskite film. A systematic investigation of the ZnO deposition time on the PCE has been carried out. A deposition time of five minutes achieved a ZnO layer in the PSCs with the highest power conversion efficiency of up to 13.8%. This excellent photovoltaic property was caused by the excellent light absorption property of the high-quality perovskite film and a fast electron extraction at the perovskite/DETL interface.

Highlights

  • Organic-inorganic hybrid halide perovskites CH3 NH3 PbX3 (X=I, Br, or Cl) are very promising materials in perovskite solar cells (PSCs) owning to their tunable direct bandgap [1], high light absorption coefficient [2], excellent carrier mobility [3] and long carrier diffusion length [4]

  • Zinc Oxide (ZnO) and MAPbI3 [30,31], which enables the rapid injection of electrons from the perovthe perovskite layer into the ZnO and bottom electrode

  • MAPbI3 films deposited deposited directly onto a Nb O5 /ZnO double electron transport layer (DETL) showed no changes in its color directly onto a Nb2O5/ZnO DETL 2showed no changes in its color as shown as shown in the right part of Figure 1

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Summary

Introduction

Organic-inorganic hybrid halide perovskites CH3 NH3 PbX3 (X=I, Br, or Cl) are very promising materials in perovskite solar cells (PSCs) owning to their tunable direct bandgap [1], high light absorption coefficient [2], excellent carrier mobility [3] and long carrier diffusion length [4]. The preparation of the electron transport layer (ETL) in PSCs when using materials such as TiO2 requires high temperature annealing [8]. This has prevented the development of PSCs as a promising future clean energy. The electron mobility of ZnO is substantially higher than TiO2 Nanomaterials 2021, 11, 329 the ETL is notably lower than that of a TiO2 mesoporous film. These advantages make ZnO an ideal choice the choice.

The was found in the current work as shown left part of Figure
O5used
Materials Preparation
Device Fabrication
Characterization
Discussion
TheeV perovskite film

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