Abstract
Owing to their superior optical properties, semiconductor nanopillars/nanowires in one-dimensional (1D) geometry are building blocks for nano-photonics. They also hold potential for efficient polarized spin-light conversion in future spin nano-photonics. Unfortunately, spin generation in 1D systems so far remains inefficient at room temperature. Here we propose an approach that can significantly enhance the radiative efficiency of the electrons with the desired spin while suppressing that with the unwanted spin, which simultaneously ensures strong spin and light polarization. We demonstrate high optical polarization of 20%, inferring high electron spin polarization up to 60% at room temperature in a 1D system based on a GaNAs nanodisk-in-GaAs nanopillar structure, facilitated by spin-dependent recombination via merely 2–3 defects in each nanodisk. Our approach points to a promising direction for realization of an interface for efficient spin-photon quantum information transfer at room temperature—a key element for future spin-photonic applications.
Highlights
Owing to their superior optical properties, semiconductor nanopillars/nanowires in onedimensional (1D) geometry are building blocks for nano-photonics
We report on our achievement of electron spin polarization up to 60% at room temperature (RT) without a magnetic field, which is much higher than the initially injected spin polarization, in a periodic array of dilute nitride GaNAs nanodisk (ND)-in-GaAs NP structure
The GaNAs/GaAs DiP array was fabricated from a multiple quantum well (MQW) sample by a top-down approach employing nanosphere lithography (NSL) and inductively coupled plasma reactive ion etching (ICP-RIE) processes, see Methods section for details
Summary
Owing to their superior optical properties, semiconductor nanopillars/nanowires in onedimensional (1D) geometry are building blocks for nano-photonics. The confinement of photonic modes and their propagation along the NP/NW axis, promising for guiding light on the nanoscale between different photonic components, offer great potential for applications in photonic integrated circuits These superior optical properties have placed NPs/NWs in a pole position to be ideal interfaces and building blocks bridging between spinand photon-coded quantum information in future spin-photonic devices and integrated circuits. We report on our achievement of electron spin polarization up to 60% at RT without a magnetic field, which is much higher than the initially injected spin polarization, in a periodic array of dilute nitride GaNAs nanodisk (ND)-in-GaAs NP structure (referred to as GaNAs/GaAs DiP hereafter) We show that such a high electron spin polarization degree is facilitated by spin-dependent recombination (SDR) via, strikingly, merely 2–3 intrinsic point defects (i.e., gallium interstitials Gai) in each GaNAs ND. This work demonstrates the potential of the proposed approach in the realization of RT-operational, polarized nanoscale spin and light emitters, e.g., the GaNAs/GaAs DiP structure, promising for practical applications in future spin-photonics and quantum communication network technology
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