Abstract
A new and versatile mechanism for electrical tuning of intersubband transitions (ISBT) in GaN High Electron Mobility Transistor (HEMT) device at room temperature is presented. In present study, experimental demonstration is provided which clearly discriminate ISBT from any other transitions induced by deep level traps, defects, etc. in 100 nm GaN HEMT device at room temperature. The strong interaction of light with two-dimensional electron gas (2DEG) inside asymmetrical triangular quantum well of GaN HEMT is investigated. The resultant ISBT of the carriers can be explained through pinning of the fermi level inside the quantum well by applying an electrical field along growth direction through gate. Presently intersubband (ISB) based devices are operated at cryogenic temperature to minimize the thermal lattice vibration. The inherent advantage of conduction band tuning through external bias in HEMT structure as demonstrated in this works can leads to room temperature device operation feasibility.
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