Abstract
We report the room temperature photoluminescence and electroluminescence properties of boron incorporated into highly strained InGaAs, forming BGaInAs, grown on GaAs substrates. X-ray diffraction was used to determine the alloy composition and strain of BGaInAs quantum wells on GaAs. As expected, the addition of boron reduced the quantum well compressive strain, preventing strain-relaxation and enabling extension of the peak emission wavelength of InGaAs quantum wells to 1.3 μm on GaAs. We also report both the longest wavelength emission observed from BGaInAs (1.4 μm) and electrically injected photoemission from a dilute-boride active region. We observed a blueshift in electroluminescence, due to unintentional in situ annealing of the active region, which we mitigated to demonstrate a path to realize true 1.3 μm emitters in the presence of in situ annealing.
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