Abstract
We have studied the room-temperature photoconductivity in the wavelength range 1–2.6 μm in InAs/GaAs heterostructures with quantum dots (QDs). Specific features of these heterostructures grown using the metalorganic vapor phase epitaxy (MOVPE) were an increase in the amount of InAs during the formation of a sheet of QDs and the use of alternating low-and-high-temperature regimes during their overgrowth with a GaAs barrier layer. For the first time, the MOVPE-grown multilayer InAs/GaAs heterostructures with quantum dots exhibited photoluminescence in a wavelength range of up to 1.6 μm and the photoconductivity up to 2.6 μm at room temperature. The heterostructures exhibited a room-temperature voltage sensitivity of 3 × 103 V/W (within a Si-plate filter bandwidth) and a specific detectivity of 9 × 108 cm Hz1/2 W−1.
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