Abstract
Room-temperature operation of a ZnSe-active-layer double-heterostructure laser diode (LD) was observed. The lasing wavelength was 471 nm. The emission energy shift with increasing current is explained by band filling and band-gap shrinkage. The threshold carrier density is calculated to be 4×1018 cm-3. We conclude that the dominant lasing mechanism of II–VI double heterostructure laser diodes is the recombination of electron-hole plasma. It is also the dominant mechanism in ZnCdSe quantum-well separate-confinement-heterostructure laser diodes. In both types of LD's, the band-gap shrinkage was observed near the threshold.
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