Abstract
Double quantum well, tensile strained AlGaInP/GaInP lasers have been grown by MOCVD which emit at 619–623 nm. The dependence of threshold current density Jth on cavity length and temperature has been investigated and a pulsed Jth of 2.15 kA cm−2 obtained for a 750 μm long device operating at room temperature. Comparison of these lasers with unstrained devices shows evidence of a reduction in the intrinsic threshold current due to strain.
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