Abstract
Room-temperature gain coupled distributed feedback (GC-DFB) lasers have been realized by implantation induced intermixing in the GaAs/AlGaAs material system. The implantation dose has been systematically varied to realize GC-DFB lasers with different gain coupling coefficients due to different band-gap modulation of the active quantum wells. It is demonstrated that a band-gap modulation of 7 meV is sufficient to achieve a high single mode yield at room temperature. The results are discussed on the basis of calculations with the optical matrix theory.
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