Abstract
Single-stack InAsSb self-assembled quantum dashes (QDashes) laser grown by metalorganic vapor phase epitaxy based on InP (001) substrate is reported. High-quality InAsSb quantum dashes have been acquired under the optimized growth conditions, such as substrate temperature, growth rate, deposition thickness and V/III ratio. Surface QDashes morphologies have been characterized by atomic force microscopy whereas the ones buried in active region have been investigated by transmission electron microscope with high resolution X-ray Energy Dispersive Spectroscopy to confirm the antimony composition. Double channel waveguide laser with 40 μm width ridge has been fabricated by standard optical lithography and wet etching. Pulsed room temperature operation demonstrates the wavelength from 1.72 to 1.79 μm for different injection currents. In addition, the laser peak output power can exceed 600 mW with 12.8% of differential quantum efficiency and even under continuous wave operation, the maximum optical power still remains 26 mW.
Highlights
Attempts to use InAs nanostructures based on InP substrates to extend the wavelength further into the mid-infrared region of 1.8–2.3 μm are attracting more attention, where lasers are attractive for applications in molecular spectroscopy, biomedical surgery, remote sensing of atmospheric and environmental protection.[10]
There have been several groups investigating the growth of InAsSb nanostructures based on InP substrate decade years ago,[19,20,21,22] and the photoluminescence (PL) at a wavelength of 2.35 μm was reported for midinfrared emitters by molecular beam epitaxy (MBE).[23]
We report the realization of single-stack InAsSb quantum dashes (QDashes) laser based on InP substrate, with emission wavelength near 1.8 μm at room temperature
Summary
Within the last couple of years, a large improvement in the device quality of quantum dots (QDs) and quantum dashes (QDashes) lasers was achieved and specific properties like extremely low threshold current density, reduced temperature sensitivity, wide gain bandwidth and ultra-small linewidth enhancement factor could be confirmed.[1,2,3,4,5,6] Up to now, most of the work has been focused on the InAs/GaAs material system at wavelength of 1.3 μm and InAs/InP material system in the telecom wavelength ∼ 1.55 μm.[7,8,9] Recently, attempts to use InAs nanostructures based on InP substrates to extend the wavelength further into the mid-infrared region of 1.8–2.3 μm are attracting more attention, where lasers are attractive for applications in molecular spectroscopy, biomedical surgery, remote sensing of atmospheric and environmental protection.[10]. Room temperature operation of InAsSb quantum dashes laser near 1.8 μm based on InP (001) substrate
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