Abstract
The first self-assembled InAs quantum dash lasers grown by molecular beam epitaxy on InP (001) substrates are reported. Pulsed room-temperature operation demonstrates wavelengths from 1.60 to 1.66 μm for one-, three-, and five-stack designs, a threshold current density as low as 410 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> for singlestack uncoated lasers, and a distinctly quantum-wire-like dependence of the threshold current on the laser cavity orientation. The maximal modal gains for lasing in the ground-state with the cavity perpendicular to the dash direction are determined to be 15 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">–1</sup> for single-stack and 22 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">–1</sup> for five-stack lasers.
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