Abstract
We demonstrate the first room-temperature operation of a double heterojunction unipolar hot-electron transistor. Our test structure has a current gain greater than 10 and a measured current drive capability in excess of 1200 A cm−2. The device uses an indirect, wide-band-gap AlSb0.92As0.08 emitter and the transistor base is a 100-Å-wide InAs layer.
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