Room Temperature NO2 Gas Sensor Based on SnO2-WO3 Thin Films

Abstract

Metal oxide semiconductors (MOS) are important and promising materials in optoelectronics, and it has been widely used in various catalytic applications such as gas sensing due to its high reactivity with many gases. In current work, mixtures of SnO2-WO3 (1:1) were prepared to synthesize nanostructured thin films by pulsed laser deposition as gas sensors. The sensitivity of sensors was measured for a relatively low concentration (200 ppm) of NO2 gas at room temperature; sensors prepared with target exposed to (200) laser shots have higher sensitivity with a maximum value of 96.49 % at time 65 s as compared with the sensors prepared with (150) laser shots where the sensitivity has a maximum value 71.82 % at time 110 s; XRD pattern shows a better crystalline and high intensity with increasing laser shots up to 200; scanning electron microscopy (SEM) micrographs show approximate homogeneity of grains that cover the substrate without cracks and pinholes with nanoparticles fall in micro and nanometer range 50–200 nm. The values of the direct band gap were found to be 2.07143 eV for films prepared with 150 laser shots and 2.02899 eV for films prepared with 200 laser shots which have higher absorbance than the former films due to the increment in thickness and particle size. Empirical equations between sensitivity and gas exposure time have been formulated with great coincidence with the experimental data.