Abstract
Tellurium oxide (TeO 2) thin films were deposited on quartz substrates by sputtering a Te metal target in an Ar + O 2 gas mixture. The structure and phase identification of the samples were investigated by X-ray diffraction (XRD) and Raman spectroscopy. The as-deposited films were amorphous and became crystalline after thermal annealing at 500 °C. The optical energy gap of the films was determined from transmittance and reflectance spectra. The direct energy gap values were found to be 3.81 eV in as-deposited films and 3.73 eV in thermally annealed samples. Properties of the TeO 2 thin films for NO 2 gas sensing at room temperature were also investigated. The as-deposited films showed negligible sensitivity to NO 2 gas. On the contrary the films prepared by thermal annealing showed a promising sensitivity and response towards tested gas.
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