Abstract
Negative differential conductance based on forward biased band-to-band tunneling is demonstrated at room temperature in a three-terminal Si surface tunneling device. The device is fabricated on a SIMOX wafer to achieve an extremely small bulk leakage current together with a sharp drain impurity profile. A new device structure is also employed to completely eliminate excess tunneling current at the field oxide corner. This functional device is expected to be a useful post-CMOS device in future Si technology.
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