Room temperature multiferroicity for BaFe12O19 thin film fabricated by pulsed laser deposition technique

Abstract

BaFe12O19 thin film has been deposited on silicon (111) substrate by the pulsed laser deposition (PLD) technique. The remnant polarization is found ~ 0.016 μC/cm2 at room temperature measured by the PE-loop tracer. Ferromagnetic properties of the prepared film have been determined by the superconducting quantum interference device (SQUID) vibrating sample magnetometer which shows the saturation magnetization 216 and 88 emu/cm3 at 300 and 5 K temperature, respectively. Zero fields cool and field cool magnetic measurements have been studied in the temperature range 5–350 K under 100 Oe magnetic field. The BaFe12O19 film has semiconducting behaviour above the 300 kHz frequency with conductivity σ ~ 10–6 Ω−1 cm−1. Further, I–V measurement of the BaFe12O19 film deposit on silicon substrate was carried out within the sweeping voltage ± 10 V, which reveals the diode-like rectifying behaviour. The co-existence of ferromagnetic and ferroelectric properties in a BaFe12O19 film can be used in future generation memory devices.