Abstract
A series of Co 40Fe 40B 20/SrTiO 3/Co 40Fe 40B 20 magnetic tunnel junctions with a bottom-pinned synthetic antiferromagnet have been prepared by sputtering. Devices optimally annealed at 325 °C exhibit an exchange bias of about 65 mT, and a tunnel magnetoresistance of 2%. The smaller than predicted effect is attributed to the lack of epitaxy between the crystallized CoFeB electrodes and the SrTiO 3 (STO) barrier, due to poor crystal quality of the barrier layer. Unlike MgO, well-crystallized, oriented STO does not grow on amorphous Co 40Fe 40B 20.
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