Abstract
The present study explores the systematic investigation of magnetoelectric coupling and magnetic field sensing characteristics of 2–2 layered Ni50Mn35In15/Pb0.96La0.04(Zr0.52Ti0.48) O3 (Ni–Mn–In/PLZT) multiferroic heterostructure fabricated over Si substrate via DC/RF magnetron sputtering technique. The temperature-dependent dielectric constant curve depicts a typical hump-like structure in the temperature range of 266–283 K, which overlaps with the Ni–Mn–In martensite transformation region. The magnetoelectric coupling coefficient (αME) as a function of crucial factors such as DC bias magnetic field, AC magnetic field and its frequency are also analyzed and well explained. A αME of ~1.2 V cm−1 Oe is observed at ~400 Oe bias magnetic field. The multiferroic heterostructure exhibits excellent magnetic field sensing parameters with sensitivity, correlation coefficient (r2), hysteresis and inaccuracy of ~0.58 mV Oe−1, 0.9992, 1.46% full-scale output (FSO) and 2.4% FSO, respectively. Such Si-integrated Ni–Mn–In/PLZT thin-film-based multiferroic heterostructures are useful for magnetic field sensing and nanoelectromechanical system device applications at room temperature.
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