Room temperature magnetoelectric memory cell using stress-mediated magnetoelastic switching in nanostructured multilayers

Abstract

We present here the demonstration of magnetoelectric switching of magnetization between two stable positions defined by a combination of anisotropy and magnetic field. A magnetoelastic nanostructured multilayer with the required uni-axial characteristic was deposited onto a commercial piezoelectric actuator. Thanks to the inverse magnetostrictive effect, the effective anisotropy of the magnetic element is controlled by the applied voltage and used to switch magnetization from one state to the other. Both vibrating sample magnetometer and magneto-optical Kerr effect measurements have been performed and demonstrate the magnetoelectric switching.