Room temperature luminescence from ZnSe1−xTex (x<1%) epilayers grown on (001) GaAs

Abstract

Photoluminescence experiments have been performed to systematically study the effect of thermal processing on ZnSe1−xTex (x<1%) epilayers. Our results show that, a ZnSeTe epilayer under proper post growth thermal annealing can emit light in the visible range of 5500–7000 Å at room temperature. Thus by systematically processing these samples, they could be used for II–VI laser diodes that can operate at room temperature. The results from hydrogen passivation study done on these samples are consistent with the previous reports that the broadband emission is related to an isoelectronic defect, i.e., excitons bound to the Te clusters.