Abstract
Large single crystals serve as an ideal platform for investigating intrinsic material properties and optoelectronic applications. Here we develop a method, namely, room-temperature liquid diffused separation induced crystallization that uses silicone oil to separate the solvent from the perovskite precursors, to grow high-quality perovskite single crystals. The growth kinetics of perovskite single crystals using this method is elucidated, and their structural and optoelectronic properties are carefully characterized. The resultant perovskite single crystals, taking CH3NH3PbBr3 as an example, exhibit approximately 1 µs lifetime, a low trap density of 4.4 × 109 cm−3, and high yield of 92%, which are appealing for visible light or X-ray detection. We hope our findings will be of great significance for the continued advancement of high-quality perovskite single crystals, through a better understanding of growth mechanisms and their deployment in various optoelectronics. The diffused separation induced crystallization strategy presents a major step forward for advancing the field on perovskite single crystals.
Highlights
Large single crystals serve as an ideal platform for investigating intrinsic material properties and optoelectronic applications
Since solubility is measured in terms of the maximum amount of solute dissolved in a solvent at equilibrium, a solution system can reach oversaturated by varying temperature and concentration
This has been frequently taken for growing perovskite single crystals (SCs), which is well known as the inverse temperature crystallization (ITC) method
Summary
Large single crystals serve as an ideal platform for investigating intrinsic material properties and optoelectronic applications. We develop a method, namely, room-temperature liquid diffused separation induced crystallization that uses silicone oil to separate the solvent from the perovskite precursors, to grow high-quality perovskite single crystals. Huang and coworkers reported high radiation and imaging detection devices with sensitivity up to 2.1 × 104 μC Gyair−1 cm−2 under 8 KeV X-ray radiation with perovskite SCs35,36 Among these approaches, a rapid facile crystallization route based on the “inverse solubility” effect has been widely used[27,29,37]. In contrast to controlling the heating or cooling rate, maintaining the precursor solution at RT is apparently much easier With this knowledge, we establish this facile crystallization route for growing SCs across a wide range of perovskite semiconductors and uncover how to enable to grow high-quality perovskite SCs at RT. The versatility of our approach provides a generic strategy to grow high-quality perovskite SCs with the selection of suitable solvents and medium materials, which further pushes towards nextgeneration perovskite optoelectronic applications
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